AlxGa1 − xN (0.7  <  x  <  1) Schottky diodes using distributed polarization doped layer with a current density of 14 kA/cm2

High Al-content AlxGa1−xN (0.7 < x < 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (∼14 kA/cm2) and a high breakdown field of ∼8.3 MV/cm. The SBDs also exhibited low ideality factors of (η ∼ 1.2) with a high Schottky barrier height (Φb ∼ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.