Investigations demonstrate thermal effects on magnetization reversal in Permalloy, suggesting implications for magnetic memory devices.
The magnetization of a nanosized thin film reverses owing to the spin-orbit torque (SOT) induced via a spin injection from a heavy metal (HM). The magnetization reversal can be used as a magnetic-memory binary digit at temperatures above room temperature. We investigated magnetization reversal by means of SOT under the thermal effect using micromagnetic simulation. The thermal effect was introduced as random magnetic fields. The averaged magnetization reversal time decreased with increasing temperature. However, several samples exhibited exceptional oscillatory behavior of the magnetization during the reversal and the reversal times increased.
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Fujioka et al. (2023) studied this question.
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