Dynamical coherent potential approach for the s-f model in antiferromagnetic semiconductors

For the s-fmodel in an antiferromagnetic semiconductor, the effect of the antiferromagnetic ordering of the localized spins on the conduction-electron state is investigated over a wide range of exchange strengths by combining the effective-medium approach with the Green's function in 2 x 2 sublattice Bloch function representation. The band-splitting due to the reduced magnetic Brillouin zone occurs below the Néel temperature. There is a marked effect of the thermal fluctuation of the antiferromagnetically ordered localized spins on the conduction electron at the energies near the top (bottom) of the lower- (higher-) energy subband.