Demonstrates the control of electronic phases in ultrathin films through disorder suppression, suggesting implications for advanced materials designs.
Strong spin-orbit coupling in 5d transition-metal oxides produces correlated electronic phases that are highly sensitive to disorder and dimensionality. Here, we investigate the thickness-dependent transport of epitaxial SrIrO₃ (SIO) thin films, comparing insulator-like (SIO_i) and metal-like (SIO_m) types. Without capping, SIO_i localizes at 7 unit cells (u.c.), while SIO_m localizes at 3 u.c., revealing distinct disorder thresholds. Notably, applying a SrTiO₃ (STO) capping layer suppresses localization in both types. The critical thickness for the metal-insulator transition decreases to below 3 u.c. for SIO_i and to 2 u.c. for SIO_m. Structural analysis suggests that the STO capping mitigates intrinsic disorder by inducing lattice relaxation in the ultrathin films. This approach offers a pathway to control electronic phases in correlated oxide heterostructures via interface engineering.
No takes yet. Share an insight, caveat, or question.
Maeng et al. (2026) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: