Experiments demonstrate a novel spin valve design using chiral perovskites for tunable resistance in electronics, enhancing memory capacity.
Spin valves are conventionally limited to binary resistance states controlled solely by magnetic fields, restricting their functional versatility and integration density. Here, we demonstrate a spin valve using a vertically aligned, chiral hybrid perovskite as the spacer, which integrates circularly polarized light as an additional control dimension. The device exhibits a magnetoresistance ratio of ∼5% at 10 K. Due to the intrinsic circular dichroism of the perovskite, circularly polarized light illumination induces a chirality-dependent photovoltaic effect that selectively modulates the baseline device resistance. Specifically, (S/R-NEA)₂FA₂Pb₃Br₁₀-based devices respond more strongly to left- and right-handed circularly polarized light, respectively. By combining magnetic field switching (parallel/antiparallel states) and optical control (dark, σ⁻, σ⁺ illumination), we achieve up to six distinct, nonvolatile resistance levels within a single device. This work demonstrates that chiral perovskites are promising candidates for high-density multistate memory and novel spin-optoelectronic logic.
No takes yet. Share an insight, caveat, or question.
Li et al. (2026) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: