Low-Frequency Time-Domain Response of Thin-Film Lithium Niobate Electro-Optic Modulator

Thin-film lithium niobate electro-optic modulators exhibit outstanding advantages such as large bandwidth, low insertion loss, and low half-wave voltage, demonstrating broad application prospects. However, due to internal defects in lithium niobate crystals, modulators exhibit electro-optic relaxation phenomena, with the relaxation time of thin-film structures being reduced by more than two orders of magnitude compared to bulk materials. In this study, we fitted and simulated the electro-optic relaxation behavior of thin-film lithium niobate modulators based on RC circuit model, effectively explaining their time-domain response characteristics under low-frequency conditions. By comparing thin-film modulators with and without silica cladding structures, the fitting results indicate that the relaxation time of modulators with cladding is approximately 11.9 ms, showing positive DC drift, whereas the relaxation time of modulators without cladding is significantly shortened to about 88.6 μs and exhibits negative DC drift. Additionally, the enhancement of optical intensity alters the photoconductivity of the material, thereby affecting its low-frequency electro-optic response behavior. This research provides important ideas for the design and optimization of next-generation integrated lithium niobate photonic modulators with high stability and controllability.