Optimization of Haacke’s Figure of Merit for Indium Tin Oxide Thin Films

The goal of this project is to determine the optimal process conditions for producing indium tin oxide (ITO) thin films with superior electrical and optical properties by controlling the oxygen (O 2 ) flow rate during radio-frequency magnetron sputtering and the post-deposition annealing temperature.For this purpose, a systematic experimental plan was designed to quantitatively analyze the film properties as a function of two independent variables.We tried three O 2 flow rates (0, 2.5, and 5.0 sccm) and three annealing temperatures (200, 250, and 300 C) corresponding to nine different process combinations.The properties of these films were thoroughly evaluated using ultraviolet-visible spectrophotometry for optical transmittance, X-ray diffraction for crystal structure, atomic force microscopy for surface roughness, and the Van der Pauw method for sheet resistance.Importantly, the overall film performance is evaluated using Haacke's figure of merit, which provides a quantitative metric for both optical transmittance and electrical conductivity.Through this systematic evaluation, this study seeks to identify the optimal annealing temperature and O 2 flow rate and to establish a comprehensive understanding in optimizing the ITO film as a transparent conducting material.