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Demonstrates novel analytical solutions for thin-film ferroelectric materials, suggesting enhanced modeling techniques for their physical properties.
Thin-film ferroelectric materials have been identified as having significant technological promise in microelectronics, optoelectronics, and sensor applications owing to their distinctive physical properties. The equation for thin-film ferroelectric materials with time-fractional derivatives offers enhanced precision in modeling the physical properties of such systems. The present study proposes a modified extended tanh-function approach to derive novel analytical solutions for the time-fractional thin-film ferroelectric material model. This method has been successfully implemented to derive various exact solutions to the model and plot their 3-D graphs. The findings of this study offer novel theoretical underpinnings for both the theoretical research and practical applications of thin-film ferroelectric materials
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Du et al. (2026) studied this question.
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