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April 7, 2026Applied Physics Letters0 citations

Mechanisms of Total-Ionizing-Dose Effects in a-IGZO TFTs with Varying Channel Thicknesses

A comprehensive investigation of the underlying mechanism for total-ionizing-dose effects in a-InGaZnO TFTs with varied channel thicknesses

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Authors

GYGuangan YangCWC. S. WangZGZheng Guo

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Overview

Investigation explores total-ionizing-dose responses in a-IGZO thin-film transistors, suggesting thicker channels increase radiation sensitivity.

Key Points

  • To examine how channel thickness affects the total-ionizing-dose response of a-IGZO TFTs.
  • Systematic investigation of channel thickness variations
  • Irradiation experiments to observe threshold voltage changes
  • X-ray photoelectron spectroscopy to analyze hydrogen concentration
  • C-V characterization to assess energy distribution of traps
  • Thicker a-IGZO layers exhibit a greater negative threshold voltage shift during irradiation
  • Higher hydrogen ion density correlates with increased field-effect mobility
  • Best radiation hardness observed in TFTs with 15 nm channel thickness
  • Radiation-induced traps show a double-exponential energy distribution
  • Damage recovery demonstrated through low-temperature annealing at 200 °C.

Cite This Study

Yang et al. (2026) studied this question.

synapsesocial.com/papers/69d49fe5b33cc4c35a228556https://doi.org/10.1063/5.0314987
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