This investigation compares silane-coated and phosphoethylammonium-passivated quantum dots, revealing implications for efficiency at low temperatures.
We explore silane-coated formamidinium lead bromide (FAPbBr₃) quantum dots (QDs) as single photon emitters and compare them to FAPbBr₃ QDs passivated with a phosphoethylammonium derivative (PEAC₈C₁₂), which represents current state-of-the-art ligand passivation. We compare properties including single-photon purity (g⁽²⁾(τ)), line width, blinking, and photostability. We find that at room temperature, these silane-coated dots perform comparably to PEAC₈C₁₂-passivated dots, while exhibiting improvements in photostability. However, we find that at 4 K, silane-coated FAPbBr₃ QDs perform worse than the PEAC₈C₁₂-passivated samples, exhibiting faster blue-shifting and photobleaching under illumination. Analysis of fluorescence lifetime intensity distributions from the photon-counting data indicates increased efficiency of fast nonradiative processes in the silane-coated QDs at 4 K. We propose a trion-related degradation pathway at low temperatures that is consistent with the observed kinetics and estimate that at 4 K with 6.1 μJ/cm², 472 nm excitation the silane-coated QDs build up double the trion population of their PEAC₈C₁₂-passivated counterparts.
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Kline et al. (2026) studied this question.
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