This work investigates the formation of blisters during annealing an Al 2 O 3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al 2 O 3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H 2 and H 2 O and (ii) Al 2 O 3 being a diffusion barrier.
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Vermang et al. (2012) studied this question.
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