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November 1, 1998IEEE Electron Device Letters

Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate

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WZWeiquan ZhangPrecision Research (United States)MCMansun ChanHong Kong University of Science and TechnologySFS.K.H. FungTaiwan Semiconductor Manufacturing Company (Taiwan)

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Zhang et al. (1998) studied this question.

synapsesocial.com/papers/69d6b4d7733a2b54c8aa80f7https://doi.org/10.1109/55.728904
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Also Consider

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  2. 2Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits1995 · 29 citations
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  4. 4High-gain lateral bipolar action in a MOSFET structure1991 · 107 citations
  5. 5Development of an integrated high speed silicon PIN photodiode sensor1995 · 50 citations