Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m⁻² , low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W⁻¹ ).
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Wang et al. (2017) studied this question.
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