Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

Two-dimensional (2D) transition metal dichalcogenide (TMD) materials are regarded as promising channel candidates for extreme contacted gate pitch (CGP) scaling. However, basic demonstration of the modules required to build logic devices is limited. For the first time, we demonstrate comparable n-type and p-type high-performance on 2D transistors. Translation to 300 mm wafer processing is tested by die-by-die transfer of the 2D material. The 300 mm fabrication preserves a relatively high mobility of 30 cm 2 /V•s. We demonstrate scaling of nMOS contact length (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</inf> ) to 12 nm and top gate length (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> ) to 10 nm. Devices maintain high current density at short L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</inf> as well as in top-gate only operation.