Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
No takes yet. Share an insight, caveat, or question.
Klitzing et al. (1980) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: