Ab Initio Site‐Selective Occupancy and Luminescence Enhancement in Broadband NIR Emitting Phosphor Mg₇Ga₂GeO₁₂:Cr³⁺

Cr 3+ activated near‐infrared (NIR) phosphors are getting unprecedented attention to fabricate the broad band NIR light emitting diodes (NIR‐LEDs) for nondestructive detection, bio‐imaging, and night vision. However, it remains a major challenge to obtain ultrabroadband NIR emitting phosphor with excellent quantum yield (QY). Here, a broadband NIR emitting phosphor Mg 7 Ga 2 GeO 12 :Cr 3+ (MGGO: Cr 3+ ) ranging from 600 to 1300 nm with an outstanding QY (93%) and large full width of half maximum (FWHM = 226 nm) is developed, in which the site occupancy tendency of Cr 3+ in MGGO host is discussed in detail through combining the structure optimization and the first‐principles theory calculation with luminescent properties at low temperature. After that, the emission intensity of MGGO:Cr 3+ is improved through partial substitution of Mg 2+ by alkaline‐earth ions Ca 2+ , Sr 2+ , or Ba 2+ , and the luminescence enhancement mechanism is also investigated. Furthermore, the NIR pc‐LED device is fabricated by combining 450 nm blue LED chip with the brightest phosphor MGGO:Cr 3+ /Ba 2+ , and its potential applications are evaluated in the field of nondestructive detection, night vision, and bio‐imaging.