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Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO 2 were observed, while a luminescence band at 2.6–2.9 eV which has very similar properties to the one observed in SiN x was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6–2.9 eV results from Si–N bonds in the films and that the present films have regions where Si–N bonds gathered.
Noma et al. (Fri,) studied this question.