Electrical performance stability of indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) is evaluated under negative bias illumination stress (NBIS). A bottom‐gate IGZO TFT whose top surface is passivated with zinc tin silicon oxide (ZTSO) exhibits a dramatic improvement in NBIS stability compared with that of an unpassivated, bottom‐gate IGZO TFT. Oxygen chemisorption/desorption at the channel layer top surface is proposed to explain why an unpassivated TFT exhibits significantly more NBIS than a passivated TFT.
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Hoshino et al. (2015) studied this question.
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