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The silicon-vacancy (SiV) and germanium-vacancy (GeV) centers in diamond have a sharp photoluminescence with high brightness. In this work, the photoluminescence of these centers is measured up to 180 GPa using nanodiamonds integrated in a diamond anvil cell. The results show blueshifts in the mean emission energy determined by the atomic radii of the impurity. The agreement with a00exb i00exn00exi00ext00exi00exo calculations based on the lattice compression of diamond demonstrates the potential of these centers for sensing under extreme pressure conditions.
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Vindolet et al. (2022) studied this question.
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