Silicon nitride, , used as a passivating layer in microelectronics, exists in the crystalline forms and and as amorphous material. Although the two crystalline modifications differ only slightly in their structure, it has been found that each modification can be distinguished by infrared spectroscopy. The spectral characteristics of are described and a method for determining the concentration of one phase in the presence of the other has been developed.
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J. P. Luongo (1983) studied this question.
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