Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.
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Faleev et al. (2008) studied this question.
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