Fast Photothermoelectric Response in CVD‐Grown PdSe2 Photodetectors with In‐Plane Anisotropy

Abstract PdSe 2 , a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, a photothermoelectric (PTE) effect is observed in photodetectors based on PdSe 2 flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead of electron–hole separation. Direct evidence of the PTE effect is confirmed by a nonlocal photoresponse under zero bias. Moreover, the PdSe 2 photodetector shows high performance in terms of ultrafast response speed (4 µs), high air‐stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This study paves a new way for developing high‐performance photodetectors based on PdSe 2 layered materials.