Preparation and Deposition Mechanism of a ‐ SiC :  H  Films by Using Hexamethyldisilane in a Remote  H 2 Plasma

Characterization of films deposited by hexamethyldisilane (HMDS) in remote hydrogen plasma is carried out and a reaction model for film deposition is presented. The Si/C ratio increases from 0.6 to 1.3 while the optical bandgap decreases from 3.3 to 2.1 eV with an increase in substrate temperature from 30 to 600°C. When the chemical aspect of the deposition process is concerned it was found that atomic H decomposes the HMDS molecule via a chemical reaction. UV radiation appears to be inactive during the deposition process. It is proposed that the most susceptible bond for the initial breakup is the Si—Si bond in the HMDS molecule. We assume that the other possible bond for the initial break up is C—H. A reaction model for the deposition of is presented by considering as the film‐forming precursor.