Naphtho[2,1-b:6,5-b′]difuran: A Versatile Motif Available for Solution-Processed Single-Crystal Organic Field-Effect Transistors with High Hole Mobility

We here report naphtho[2,1-b:6,5-b']difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm(2) V(-1) s(-1) along with high I(on)/I(off) ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.