A 2D room-temperature, ferromagnetic crystal based 2D vdW Fe 3 GaTe 2 /MoSe 2 /Fe 3 GaTe 2 ferromagnet/semiconductor 2D van der Waals heterojunction is realized with a magnetoresistance of 3.7% at room temperature and 37.7% at 2 K under 10 nA working current.
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Yin et al. (2023) studied this question.