Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge

An averaging procedure is applied to inelastic acoustic–phonon scattering which leads to lattice-temperature-dependent constants for the phonon energy and the square of the phonon wave vector. The resulting scattering rate depends on energy only thus facilitating the search of after-scattering states in full-band Monte Carlo simulations. The model still accurately reproduces the velocity–field characteristics over a wide range of lattice temperatures, but in silicon the hot-hole tail of the energy distribution is strongly enhanced compared with the elastic equipartition approximation.