Semiconductor charge-sensitive infrared phototransistors (CSIPs) based on quantum wells are described. They are the only detectors that are able to count single photons in the terahertz region at present. In terms of the noise equivalent power (NEP), the detectors show experimental values of 7 × 10−20 W/Hz1/2, while theoretically expected values are even much lower. These NEP values are by several orders of magnitude lower than any other state-of-the-art highly sensitive detectors. In addition to the outstanding sensitivity, the detectors are featured by strong advantage of huge current responsivity (>1 × 105 A/W) and low output impedance (<10 kΩ). This excellent performance in the above has been obtained for λ = 12–28 μm. By introducing a modified scheme of detection (called “lateral-escape”) along with an improved coupler structure (bowtie antenna), we have achieved similar excellent performance for 45 μm. The CSIP provides extremely promising detectors for a variety of applications covering a wide spectral range of 12–100 μm.
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Kajihara et al. (2013) studied this question.
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