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June 8, 2022IEEE Transactions on Electron Devices

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

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Authors

LYLing YangBHBin HouFJFuchun Jia

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Yang et al. (2022) studied this question.

synapsesocial.com/papers/69d9a6497f18ff2fefa3c2c3https://doi.org/10.1109/ted.2022.3179675
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