We report here for the first time that Fermi pinning at the polySi/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that pinning occurs due to the interfacial Si-Hf and Si-O-Al bonds for HfO/sub 2/ and Al/sub 2/O/sub 3/, respectively. This fundamental characteristic also affects the observed polySi depletion. Device data and simulation results will be presented.
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Hobbs et al. (2004) studied this question.
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