Colossal magnetoresistance, half metallicity and spin electronics

The development of spin–electronic devices based on oxide magnets is reviewed. After a discussion of colossal magnetoresistance in magnetic perovskites and an introduction of the concept of half metallicity, spin–electronic devices such as ferromagnetic tunnel junctions, grain–boundary junctions, ferromagnet–superconductor hybrids and spin transistors are presented in detail. The review concludes with an outlook on future developments.