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January 1, 2026Journal of Materials Chemistry COpen Access

Defect-tuned conduction in ultrathin MoTe2 field-effect transistors

Adolfo Mazzotti Kimberly Intonti Andrea Sessa Loredana Viscardi O. Durante Aniello Pelella Stephen O'sullivan Vilas Patil Paul K. Hurley Lida Ansari Farzan Gity Antonio Di Bartolomeo

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Key Points

This research aims to understand how interfaces and defects in ultrathin MoTe2 transistors affect their conduction properties.
Systematic investigation of metal contacts and gate dielectrics.
Analysis of interfacial defects in device performance.
Experimental evaluation of the ambient environment's impact.
Defects significantly influence conduction efficiency in ultrathin transistors.
Specific interface modifications can improve device performance.
Insights into optimizing the structure for better electronic properties.

Implication

Investigation of conduction performance in ultrathin transistors, suggesting that defects significantly impact device efficiency.

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Cite This Study

Mazzotti et al. (2026) studied this question.

synapsesocial.com/papers/69d9e58f78050d08c1b75d01 https://doi.org/10.1039/d6tc00385k

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe<sub>2</sub> Field-Effect Transistors2024 · 6 citations
2Engineering the electronic properties of MoTe <sub>2</sub> via defect control2024 · 11 citations
3Defect identification in monolayer MoTe2025 · 2 citations
4Thickness-Driven Modification of Interface States and Polarization Switching in MoTe <sub>2</sub> /BaTiO <sub>3</sub> HeterostructuresOriginal Research · 2026
5Oxide induced degradation in MoS2 field-effect transistorsOriginal Research · 2026 · 2 citations

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