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We report the synthesis, morphology, and properties of poly(3-hexylthiophene)-block-poly(butyl acrylate) (P3HT-b-PBA) for stretchable electronics applications, which are consisted of semiconducting P3HT and low glass transistion temperature (Tg) PBA blocks. The P3HT-b-PBA thin films self-assembled into fibrillar-like nanostructures and maintained the edge-on oreientation even at a low P3HT composition, based on the results from atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXD). By varying the P3HT/PBA ratio, the tensile modulus decreased as the block length of PBA increased, from 0.93 GPa for P3HT to 0.19 GPa for P3HT-b-PBA12k. The field effect transistor (FET) using P3HT-b-PBA as the active layer exhibited a high p-type mobility over 10–2 cm2 V–1 s–1, indicating its good charge transporting ability. Furthermore, the P3HT-b-PBA6k based FET under 100% strain had a high mobility of 2.5 × 10–2 cm2 V–1 s–1 with an on/off ratio of 7.2 × 106, and it maintained over 10–2 cm2 V–1 s–1 for 1000 cycles, suggesting the promising stability and reproducbility. The result demonstrated that the newly designed conjugated rod–coil block copolymers could have potential applications in stretchable electronic devices.
Wang et al. (Wed,) studied this question.
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