T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor

In this paper, we propose and investigate a novel heterojunction T-shaped tunneling field-effect transistor (TTFET) using Sentaurus technology computer-aided design (TCAD) simulations. The electrical characteristics of InP/In 0.53 Ga 0.47 As heterojunction TTFET are compared with an L-shaped tunneling field-effect transistor (LTFET) and are found to be superior. The proposed T-shape of device increases the tunneling cross-sectional area of the TTFET. This results in 4.3× improvement in the drive current, 4× improvement in the transconductance, and 2.36× improvement in the cutoff frequency as compared to the LTFET. Besides this, the gate-drain overlapped structures of TTFET and LTFET reduce the ambipolarity of the device in comparison to the conventional LTFET. The distribution of source and channel of the TTFET in vertical direction enhances the scalability of the device.