Answers are grounded in this paper and cite their sources.
We prepared TiN films by metallic or nitride mode sputtering using a collimator, and investigated the characteristics of the films. Resistivity, density, thermal stress, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) measurements and transmission electron microscope (TEM) observation were carried out. The characteristics of the TiN films depended on the N 2 /Ar flow ratio. TiN deposition rates in the metallic mode with N 2 /Ar flow ratios from 0.2 to 0.5 were 3 times higher than those in the conventional nitride mode with N 2 /Ar ratios from 0.75 to 1.0. By depositing the film under the best metallic mode conditions with N 2 /Ar=0.5, the TiN film with a minimum resistivity and a maximum film density was formed. The TiN films, which were prepared under optimized conditions of metallic mode deposition, had a small concentration of oxide in the TiN, strong (111)-preferred orientation and good crystallinity.
No takes yet. Share an insight, caveat, or question.
Inoue et al. (1997) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: