Large-sized MoS₂ crystals can be grown on SiO₂/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS₂ crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS₂ crystals can reach ≈30 cm² V⁻¹ s⁻¹, which is comparable to those of exfoliated flakes.
No takes yet. Share an insight, caveat, or question.
Chen et al. (2016) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: