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January 1, 2020SHILAP Revista de lepidopterología244 citationsOpen Access

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

PSParashurama SalunkheAAA. V. Muhammed AliDKDhananjaya Kekuda

Key Points

  • This research aims to explore how varying oxygen partial pressure affects the properties of Nickel Oxide thin films.
  • NiO thin films were grown on glass substrates using reactive dc magnetron sputtering in mixed argon and oxygen ambient.
  • Structural, morphological, and optical properties were analyzed through techniques like x-ray diffraction, atomic force microscopy, and Raman spectroscopy.
  • Electrical properties were assessed to determine the conductivity type under different processing conditions.
  • Films exhibited a transition in preferred orientation from (200) to (111) with increased O2 flow rate.
  • Optical band gap of NiO films ranged from 3.36 eV to 3.52 eV, indicating semi-transparency.
  • Conductivity of films varied between n-type and p-type based on processing parameters.

Abstract

Abstract We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O 2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p 3/2 , Ni 2p 1/2 domains along with their satellite peaks. It infers the presence of both Ni +2 and Ni +3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.

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Cite This Study

Salunkhe et al. (2020) studied this question.

synapsesocial.com/papers/69db2086387cf706986882b7https://doi.org/10.1088/2053-1591/ab69c5
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