Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

In this letter, we report on demonstrating high-performance field-plated lateral <tex-math notation="LaTeX">β </tex-math> -Ga 2 O 3 Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance ( <tex-math notation="LaTeX">R_ ON, sp </tex-math> ) of 24.3 <tex-math notation="LaTeX">mΩ · </tex-math> cm 2 at an anode–cathode spacing ( <tex-math notation="LaTeX">LAC </tex-math> ) of <tex-math notation="LaTeX">24~μ m </tex-math> . To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm 2 is the highest BV achieved among all the <tex-math notation="LaTeX">β </tex-math> -Ga 2 O 3 SBDs. Meanwhile, lateral <tex-math notation="LaTeX">β </tex-math> -Ga 2 O 3 SBD with <tex-math notation="LaTeX">LAC = 16\,\,μ m </tex-math> also demonstrates a high BV of 2.25 kV and low <tex-math notation="LaTeX">R_ ON, sp = 10.2\,\,mΩ · </tex-math> cm 2 , yielding a record high dc power FOM of 500 MW/cm 2 . Combining with 10 9 high-current ON/OFF ratio, 1.15-eV Schottky barrier height and 1.25 ideality factor, <tex-math notation="LaTeX">β </tex-math> -Ga 2 O 3 SBD with field-plate structure shows its great promise for power electronics applications.