This investigation demonstrates enhanced UV detectivity in a self-powered photodetector using a GaN/Ga2O3 structure, suggesting promising applications.
In this work, authors have deeply investigated a combination of gallium nitride (GaN) and gallium oxide (Ga 2 O 3 ) semiconductors, which are considered strong potential candidates for solar‐blind ultraviolet (UV) photodetectors. Using Silvaco TCAD software, the proposed structure contains platinum as a Schottky contact on the top of the Ga 2 O 3 absorbed layer. An intermediate GaN layer was deposited on the sapphire (Al 2 O 3 ) substrate, and it has a crucial role in increasing the photogeneration rate of the used photodetector. The proposed device shows distinct current–voltage behavior under dark and illumination conditions. A high responsivity in the deep UV region has been demonstrated. Different parameters, such as doping concentration, work function, traps, and temperature effect, have been investigated to highlight the potential of the proposed structure for the next generation of UV‐Schottky photodetectors with excellent spectral selectivity and self‐powered effect.
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Filali et al. (2026) studied this question.
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