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March 30, 20253 citations

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention

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PRPrasanna Venkatesan RavindranAPAndrea PadovaniLFLance Fernandes

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Ravindran et al. (2025) studied this question.

synapsesocial.com/papers/69db51d7498b35d3e6a3cc90https://doi.org/10.1109/irps48204.2025.10982749
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