Electro-static carrier doping was attempted in a layered transition metal disulphide MoS2 by constructing an electric double-layer transistor with an ionic liquid. With the application of gate voltage VG higher than 3 V, a metallic behavior was observed in the MoS2 channel. We found an onset of electric field-induced superconductivity in the field induced metallic phase. A maximum TC ∼ 9.4 K was observed, which could be higher than those in chemically doped bulk materials.
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Taniguchi et al. (2012) studied this question.
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