Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C

Operations for hydrogenated diamond (H-diamond) metal–oxide–semiconductor field-effect transistors (MOSFETs) after annealing at 500 °C are investigated. SiO x films are employed as oxide insulators for the H-diamond MOSFETs. Before annealing, the current output maximum, on/off ratio, and subthreshold swing for the SiO x /H-diamond MOSFET are −53.3 mA mm −1 , 1.4 × 10 9 , and 88 mV dec −1 , respectively. After annealing at 500 °C for as long as 60 min, although leakage current density of the SiO x /H-diamond MOS capacitor increases, good operations and distinct pinch-off characteristics are observed for the SiO x /H-diamond MOSFET with the above electrical properties of −2.6 mA mm −1 , 1.4 × 10 4 , and 530 mV dec −1 , respectively. Stable electrical characteristics are confirmed for the annealed SiO x /H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.