High Al-content AlxGa1-xN (0.7 < x < 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (~14 kA/cm2 ) and a high breakdown field of ~8.3 MV/cm. The SBDs also exhibited low ideality factors of (n~1.2) with a high Schottky barrier height (Φ b~ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.
Jamil et al. (2026) studied this question.