We demonstrate the highest nFET current of 390 μA/μ m at V DS = 1 V based on CVD Mos 2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION/IOFF ratio of 4 × 10 8 , and nearly zero DIBL. The high on-current achieved in monolayer Mos 2 nFET is mainly attributed to the thin EOT ~2 nm of HfO x gate oxide, short gate length of 100 nm, and low contact resistance ~1.1 kω- μm.
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Chou et al. (2020) studied this question.