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We report on the growth and characterization of high external quantum efficiency (EQE) GaAs/GaInP double heterostructures. By properly treating the GaAs/GaInP interface, we are able to produce structures measuring a record EQE of 99.5% ± 0.1% in GaAs. This efficiency exceeds the requirement for achieving laser cooling in GaAs. However, net cooling has not yet been realized due to residual below gap background absorption.
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Bender et al. (2013) studied this question.
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