Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures

For the first time, room temperature laser emission of an electrically pumped edge emitting laser device based on (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II W’ quantum well heterostructures is shown. The device was grown using metal organic vapour phase epitaxy utilising the alternative nitrogen precursor di‐ tert ‐butyl‐amino‐arsane and characterised with electroluminescence spectroscopy. At low current densities, the emission wavelength was 1339 nm. It shifted blue with 4.26 meV/(kA/cm 2 ) until the threshold current density was reached. At that point, the peak emission wavelength reached 1270 nm. With a cavity length of 2012 μm, the investigated device reached lasing threshold at 9.5 kA/cm 2 .