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Amorphous-InGaZnO is n-type semiconductor material and has enormous potential such as transparency, flexible application owing to a low temperature fabrication process. In this study, Effects of annealing on the thermoelectric properties of a-IGZO thin film are evaluated for a low temperature process. We also demonstrated flexible TEG using a-InGaZnO and PEN substrate.
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Umeda et al. (2018) studied this question.
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