Hysteretic losses have been measured on a large number of Nb3Ge samples prepared by the chemical vapor deposition process. These measurements were performed as a function of induced current and temperature on samples which contained differing amounts of second-phase material, Nb5Ge3. It was found that very low 50-Hz losses, on the order of 20 μW/cm2 at 500 rms A/cm and at temperatures of up to 12 K, could be attained in as-deposited material. An apparent correlation between the critical current density and the Nb5Ge3 content was observed, which suggested that enhanced pinning due to the second-phase precipitates was responsible for these low losses.
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Thompson et al. (1977) studied this question.
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