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January 20, 2016ACS Nano

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

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Authors

ANAnkur NipaneDKDebjani KarmakarNKNaveen Kaushik

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Nipane et al. (2016) studied this question.

synapsesocial.com/papers/69dd1d98aa9a964e8d133645https://doi.org/10.1021/acsnano.5b06529
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