Atomic number dependence of Z contrast in scanning transmission electron microscopy

Annular dark-field (ADF) imaging by scanning transmission electron microscopy (STEM) is a common technique for material characterization with high spatial resolution. It has been reported that ADF signal is proportional to the nth power of the atomic number Z, i.e., the Z contrast in textbooks and papers. Here we first demonstrate the deviation from the power-law model by quantitative experiments of a few 2D materials (graphene, MoS₂ and WS₂ monolayers). Then we elucidate ADF signal of single atoms using simulations to clarify the cause of the deviation. Two major causes of the deviation from the power-law model will be pointed out. The present study provides a practical guideline for the usage of the conventional power-law model for ADF imaging.