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Photodetectors which can work at both low and high temperatures are very important for the development of practical optoelectronic devices. Many studies have shown that low-dimensional semiconductors have more advantages in optoelectronic applications than their bulk forms. Here, we report the preparation of high-quality Sb2S3 nanowires (NWs) by a sulphur-assisted vapour transport method. The corresponding individual Sb2S3 NW based photodetectors exhibit good photoresponse in a wide spectral range from about 300 to 800 nm. The optimal photoresponse values are measured under the illumination of a 638 nm laser at room temperature: a high current ON/OFF ratio of about 210, a spectral responsivity of 1152 A W-1, a detectivity of 2 × 1013 Jones, and rise and fall times of about 37 ms, respectively. More importantly, the temperature dependence of the electrical conductivity of Sb2S3 shows three variation regions which can be attributed to the interaction between the carrier mobility and carrier concentration. The temperature dependence of the photoresponse of the photodetectors shows that they have good adaptability to temperature, and they worked very well at a wide temperature range from 8 to 420 K. Our results indicate that low-dimensional Sb2S3 crystals are promising candidates for new multifunctional optoelectronic devices.
Zhong et al. (Sun,) studied this question.